SiC Wafers 2/3/4/6/8 inch 4H-N Type Z/P/D/R Grade High Quality
1. Abstract
Our high-quality 4H-N Type SiC Wafers are available in sizes ranging from 2 to 12 inches, designed for advanced semiconductor applications. Driven by our pursuit of excellence, we are one of the few manufacturers capable of producing 8-inch SiC wafers. Our commitment to high quality and advanced technology sets us apart in the semiconductor industry.
2. Product & Compony Description
2.1 Product Description:
Our SiC Wafers 2/3/4/6/8 inch 4H-N Type Z/P/D/R Grade High Quality is engineered to meet the rigorous standards of research laboratories and semiconductor factories.
- Power electronics for electric vehicles and renewable energy systems
- RF and microwave devices for telecommunications
- High-temperature and high-power applications in aerospace and industrial sectors
2.2 Company Description:
Our company (ZMSH) has been focusing on the Sapphire field for over 10 years, with professional factory & sales teams. We've got plenty experience in Customized Products. We also undertake customised design and can be OEM. We ZMSH will be the best choice considering both price and quality. Feel free to reach out!
3. Applications
Unlock the potential of your research and development projects with Our High-Quality SiC Wafers 2/3/4/6/8 inch 4H-N Type Z/P/D/R Grade. Designed specifically for advanced semiconductor applications, our research-grade substrates offer exceptional quality and reliability.
- Lasers: SiC substrates enable the production of high-power laser diodes that operate efficiently in the UV and blue light regions. Their excellent thermal conductivity and durability make them ideal for applications requiring reliable performance in extreme conditions.
- Consumer Electronics: SiC substrates enhance power management ICs, allowing for more efficient power conversion and longer battery life. They also facilitate fast charging solutions, enabling smaller and lighter chargers while maintaining high performance.
- Electric Vehicle Onboard Batteries: SiC substrates improved energy efficiency and extending driving range. Their application in fast-charging infrastructure supports quicker charging times, enhancing convenience for EV users.
4. Product Display - ZMSH
5. SiC Wafer Specifications
| Property | 4H-SiC, Single Crystal | 6H-SiC, Single Crystal |
| Lattice Parameters | a=3.076 Å c=10.053 Å | a=3.073 Å c=15.117 Å |
| Stacking Sequence | ABCB | ABCACB |
| Mohs Hardness | ≈9.2 | ≈9.2 |
| Density | 3.21 g/cm3 | 3.21 g/cm3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index @750nm | no = 2.61 ne = 2.66 | no = 2.60 ne = 2.65 |
| Dielectric Constant | c~9.66 | c~9.66 |
| Thermal Conductivity (N-type, 0.02 ohm.cm) | a~4.2 W/cm·K@298K c~3.7 W/cm·K@298K | |
| Thermal Conductivity (Semi-insulating) | a~4.9 W/cm·K@298K c~3.9 W/cm·K@298K | a~4.6 W/cm·K@298K c~3.2 W/cm·K@298K |
| Band-gap | 3.23 eV | 3.02 eV |
| Break-Down Electrical Field | 3-5×106V/cm | 3-5×106V/cm |
| Saturation Drift Velocity | 2.0×105m/s | 2.0×105m/s |
6. Common Questions
6.1 A: What sizes are SiC wafers available in?
Q: SiC substrates are available in various sizes, ranging from 2 inches to 12 inches in diameter. We are capable of producing 8 inch ones. Other custom sizes may also be available based on specific application requirements.
6.2 A: In what applications are SiC wafers commonly used?
Q: Higher Breakdown Voltage, Better Thermal Conductivity, Wider Bandgap.
6.3 A: Can I get SiC wafers customer-tailored?
Q: Sure! We've been producing customized products for over 10 years; please contact us to share the requirements with us.
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SiC Wafers 2/3/4/6/8 /12Inch 4H-N Type Z/P/D/R Grade Images
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