8-inch 4H-N SiC Wafer, Thickness 500±25μm or customized, N-Doped, Dummy ,Production, Research Grade
8inch 4H-N type SiC Wafer's abstract
The 8-inch 4H-N type Silicon Carbide (SiC) wafer represents a cutting-edge material widely used in power electronics and advanced semiconductor applications. Silicon carbide, particularly the 4H polytype, is highly valued for its superior physical and electrical properties, including a wide bandgap of 3.26 eV, high thermal conductivity, and exceptional breakdown voltage. These characteristics make it ideal for high-power, high-temperature, and high-frequency devices.
The N-type doping introduces donor impurities such as nitrogen, enhancing the wafer's electrical conductivity and enabling precise control of its electronic properties. This doping is essential for fabricating advanced power devices like MOSFETs, Schottky diodes, and other high-efficiency components. The 8-inch wafer size marks a significant milestone in SiC wafer technology, offering increased yield and cost-effectiveness for large-scale production, meeting the demands of industries such as electric vehicles, renewable energy systems, and industrial automation.
8inch 4H-N type SiC Wafer's Properties
Basic Properties
1.Wafer Size: 8 inches (200 mm), a standard size for large-scale production, commonly used in the manufacturing of high-performance semiconductor devices.
2.Crystal Structure: 4H-SiC, belonging to the hexagonal crystal system. 4H-SiC offers high electron mobility and excellent thermal conductivity, making it ideal for high-frequency and high-power applications.
3.Doping Type: N-type (Nitrogen-doped), providing conductivity suitable for power devices, RF devices, optoelectronic devices, etc.
Electrical Properties
1.Bandgap: 3.23 eV, providing a wide bandgap that ensures reliable operation in high-temperature and high-voltage environments.
2.Electron Mobility: 800–1000 cm²/V·s at room temperature, ensuring efficient charge transport, suitable for high-power and high-frequency applications.
3.Breakdown Electric Field: > 2.0 MV/cm, indicating the wafer can withstand high voltage, making it suitable for high-voltage applications.
Thermal Properties
1.Thermal Conductivity: 120–150 W/m·K, allowing effective heat dissipation in high-power density applications, preventing overheating.
2.Coefficient of Thermal Expansion: 4.2 × 10⁻⁶ K⁻¹, similar to silicon, making it compatible with other materials such as metals, reducing thermal mismatch issues.
Mechanical Properties
1.Hardness: SiC has a Mohs hardness of 9.5, second only to diamond, making it highly resistant to wear and damage under extreme conditions.
2.Surface Roughness: Typically less than 1 nm (RMS), ensuring a smooth surface for high-precision semiconductor processing.
Chemical Stability
1.Corrosion Resistance: Excellent resistance to strong acids, bases, and harsh environments, ensuring long-term stability in demanding conditions.
8inch 4H-N type SiC Wafer's image
8inch 4H-N type SiC Wafer's application
1.Power Electronics: Widely used in power MOSFETs, IGBTs, Schottky diodes, etc., for applications like electric vehicles, power conversion, energy management, and solar power generation.
2.RF and High-Frequency Applications: Used in 5G base stations, satellite communications, radar systems, and other high-frequency, high-power applications.
3.Optoelectronics: Employed in blue and ultraviolet LEDs and other optoelectronic devices.
4.Automotive Electronics: Used in electric vehicle battery management systems (BMS), power control systems, and other automotive applications.
5.Renewable Energy: Used in high-efficiency inverters and energy storage systems, enhancing energy conversion efficiency.
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8-inch 4H-N SiC Wafer Thickness 500±25μm Or Customized N-Doped Dummy Production Research Grade Images
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