4H/6H P-Type sic wafer 4inch 6inch Z grade P grade D grade Off axis: 2.0°-4.0°toward P-type doping
4H/6H P-Type sic wafer's abstract
4H and 6H P-type silicon carbide (SiC) wafers are critical materials in advanced semiconductor devices, especially for high-power and high-frequency applications. SiC’s wide bandgap, high thermal conductivity, and excellent breakdown field strength make it ideal for operations in harsh environments where traditional silicon-based devices may fail. P-type doping in SiC, achieved through elements like aluminum or boron, introduces positive charge carriers (holes), enabling the fabrication of power devices such as diodes, transistors, and thyristors.
The 4H-SiC polytype is favored for its superior electron mobility, making it suitable for high-efficiency, high-frequency devices, while 6H-SiC finds use in applications where high saturation velocity is essential. Both polytypes exhibit exceptional thermal stability and chemical resistance, allowing devices to function reliably under extreme conditions such as high temperatures and high voltages.
These wafers are used across industries, including electric vehicles, renewable energy systems, and telecommunications, to enhance energy efficiency, reduce device size, and improve performance. As the demand for robust and efficient electronic systems continues to grow, 4H/6H P-type SiC wafers play a pivotal role in the advancement of modern power electronics.
4H/6H P-Type sic wafer's properties
The properties of 4H/6H P-type silicon carbide (SiC) wafers contribute to their effectiveness in high-power and high-frequency semiconductor devices. Here are the key properties:
1. Crystal Structure (Polytypes)
- 4H-SiC: Characterized by a hexagonal crystal structure with a four-layer repeat unit. It offers higher electron mobility (~950 cm²/V·s) than 6H-SiC, making it ideal for high-frequency and high-efficiency devices.
- 6H-SiC: Also hexagonal but with a six-layer repeat unit. It has a slightly lower electron mobility (~370 cm²/V·s) but a higher saturation velocity, useful in certain high-speed applications.
2. P-type Doping
- P-type doping is achieved by introducing elements such as aluminum or boron. This process creates positive charge carriers (holes), enabling the fabrication of P-type semiconductor devices.
- The doping level can be controlled to tailor the electrical properties of the wafer, optimizing it for specific applications.
3. Wide Bandgap (3.23 eV for 4H-SiC and 3.0 eV for 6H-SiC)
- SiC’s wide bandgap allows devices to operate at much higher temperatures, voltages, and frequencies compared to traditional silicon wafers, enhancing thermal stability and energy efficiency.
4. High Thermal Conductivity (3.7 W/cm·K)
- The high thermal conductivity of SiC enables efficient heat dissipation, making these wafers ideal for high-power applications where heat management is critical.
5. High Breakdown Electric Field (2.8-3 MV/cm)
- 4H/6H SiC wafers exhibit a high breakdown electric field, allowing them to handle high voltages without breakdown, which is crucial for power electronics.
6. Mechanical Hardness
- SiC is an extremely hard material (Mohs hardness of 9.5), offering excellent mechanical stability and wear resistance, which is beneficial for long-term reliability in harsh environments.
7. Chemical Stability
- SiC is chemically inert and highly resistant to oxidation and corrosion, which makes it suitable for use in aggressive environments, such as in automotive and industrial applications.
8. Low Defect Density
- Advanced manufacturing techniques have reduced defect densities in 4H/6H SiC wafers, which improves the performance and reliability of electronic devices by minimizing crystal defects such as dislocations and micropipes.
9. High Saturation Velocity
- 6H-SiC has a high electron saturation velocity, making it suitable for high-speed devices, although 4H-SiC is more commonly used for most high-power applications due to its superior electron mobility.
10. Compatibility with High Temperatures
- Both 4H and 6H P-type SiC wafers can operate at temperatures exceeding 300°C, far beyond the limits of silicon, making them indispensable in high-temperature electronics.
4H/6H P-Type sic wafer's Applications
These properties make 4H/6H P-type SiC wafers essential in applications requiring robust, high-efficiency power electronics, such as electric vehicles, renewable energy systems, and industrial motor drives, where the demands for high power density, high frequency, and reliability are paramount.
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Power Electronic Devices:
4H/6H P-Type SiC wafers are commonly used to manufacture power electronic devices such as diodes, MOSFETs, and IGBTs. Their advantages include high breakdown voltage, low conduction losses, and fast switching speeds, making them widely used in power conversion, inverters, power regulation, and motor drives.
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High-Temperature Electronic Equipment:
SiC wafers maintain stable electronic performance at high temperatures, making them ideal for applications in high-temperature environments, such as aerospace, automotive electronics, and industrial control equipment.
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High-Frequency Devices:
Due to the high electron mobility and low electron carrier lifetime of SiC material, 4H/6H P-Type SiC wafers are very suitable for use in high-frequency applications, such as RF amplifiers, microwave devices, and 5G communication systems.
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New Energy Vehicles:
In electric vehicles (EVs) and hybrid electric vehicles (HEVs), SiC power devices are used in electric drive systems, onboard chargers, and DC-DC converters to improve efficiency and reduce heat losses.
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Renewable Energy:
SiC power devices are widely used in photovoltaic power generation, wind power, and energy storage systems, helping to enhance energy conversion efficiency and system stability.
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High-Voltage Equipment:
The high breakdown voltage characteristics of SiC material make it very suitable for use in high-voltage power transmission and distribution systems, such as high-voltage switches and circuit breakers.
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Medical Equipment:
In certain medical applications, such as X-ray machines and other high-energy equipment, SiC devices are adopted for their high voltage resistance and high efficiency.
These applications fully leverage the superior characteristics of 4H/6H SiC materials, such as high thermal conductivity, high breakdown field strength, and wide bandgap, making them suitable for use in extreme conditions.
4H/6H P-Type sic wafer's real photos
Q&A
Q:What is the difference between 4H-SiC and 6H-SiC?
A:All of the other SiC polytypes are a mixture of the zinc-blende and wurtzite bonding. 4H-SiC consists of an equal number of cubic and hexagonal bonds with a stacking sequences of ABCB. 6H-SiC is composed of two-thirds cubic bonds and one-third hexagonal bonds with a stacking sequences of ABCACB
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4H/6H P-Type Sic Wafer 4inch 6inch Z Grade P Grade D Grade Off Axis 2.0°-4.0° Toward P-type Doping Images
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