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Brand Name : ZMSH
Model Number : SOI WAFER
Place of Origin : China
MOQ : 5
Payment Terms : T/T
Delivery Time : 2-4 weeks
Diameter : 100±0.2mm
Type/Dopant : P/B
Orientation : 1-0-0)±0.5°
Thickness : 220±10nm
Resistivity : 8.5-11.5 ohm-cm
Finish : Frontside Polished
SOI BURIED THERMAL OXIDE : Thickness: 3μm±5%
SOI HANDLE LAYER : Contact us
SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device: 220 Resistivity: 8.5-11.5 ohm-cm
Introducing our high-performance Silicon-On-Insulator (SOI) wafers, available in 100mm and 150mm diameters. These wafers are engineered for advanced electronic applications, offering superior electrical isolation, reduced parasitic capacitance, and enhanced thermal management. Ideal for high-performance computing, RF communication, MEMS devices, and power electronics, our SOI wafers ensure top-notch performance and reliability.
Wafer Dimensions:
Device Layer:
Buried Oxide (BOX) Layer:
Handle Wafer:
Superior Electrical Isolation:
High-Quality Device Layer:
Optimal Resistivity:
Enhanced Thermal Management:
Mechanical Stability:
Customization Options:
High-Performance Computing:
5G and RF Communication:
MEMS Devices:
Power Electronics:
Analog and Mixed-Signal Circuits:
Manufacturing Standards:
Quality Control:
Certifications:
Availability:
Packaging:
Upgrade your semiconductor applications with our advanced SOI wafers, engineered for excellence and reliability. Order now and experience the difference in performance and quality.
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SOI Wafer Silicon On Insulator 100mm 150mm P type Dopant B Device 220 Resistivity: 8.5-11.5 ohm-cm Images |